SI5513CD Datasheet, PDF (2/6 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary Enhancement MOSFET

SMD Type
MOSFET
Complementary Enhancement MOSFET
SI5513CD (KI5513CD)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Type Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
ID=-250μA, VGS=0V
N-CH 20
V
P-CH -20
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
VDS=-20V, VGS=0V
N-CH
P-CH
300
nA
-300
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
VDS=0V, VGS=±12V
N-CH
P-CH
±100
nA
±100
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
VDS=VGS, ID=-250μA
N-CH 0.62 0.75 1.0
V
P-CH -0.5
VGS=4.5V, ID=3.5A
25 35
VGS=2.5V, ID=2.5A
N-CH
34 50
Static Drain-Source On-Resistance
VGS=1.8V, ID=2A
RDS(On)
VGS=-4.5V, ID=-2.8A
64 90
mΩ
80 85
VGS=-2.5V, ID=-2A
P-CH
95 115
VGS=-1.8V, ID=-2A
117 150
Forward Transconductance
VDS=5V, ID=3A
gFS
VDS=-5V, ID=-2.5A
N-CH
16
S
P-CH
13
Input Capacitance
Ciss
N-Channel:
N-CH
P-CH
522.3
589
Output Capacitance
VGS=8V, VDS=0V, f=1MHz
Coss
P-Channel:
N-CH
98.48
pF
P-CH
91.18
Reverse Transfer Capacitance
VGS=0V, VDS=-10V, f=1MHz
Crss
N-CH
P-CH
74.69
67.18
Total Gate Charge
Qg
N-Channel:
N-CH
P-CH
6.24 8.11
6.55 8.52
Gate Source Charge
VGS=4.5V, VDS=10V, ID=4A
Qgs
P-Channel:
N-CH
P-CH
1.64 2.13
nC
0.31 0.4
Gate Drain Charge
VGS=-4.5V, VDS=-6V, ID=-2.5A
Qgd
N-CH
P-CH
1.34 1.74
1.3 1.69
Turn-On DelayTime
td(on)
N-Channel:
N-CH
P-CH
10.4 20.8
9.72 19.44
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VGS=4.5V, VDS=10V, ID=1A, RGEN=6Ω N-CH
P-CH
P-Channel:
N-CH
VGS=-4.5V, VDS=-6V, ID=-1A, RGEN=6Ω P-CH
4.4 8.8
3.56 7.12
ns
27.38 54.72
33.32 66.64
Turn-Off Fall Time
tf
N-CH
P-CH
4.16 8.32
4.52 9.04
Maximum Body-Diode Continuous Current IS
N-CH
P-CH
1.7
A
-1.6
Diode Forward Voltage
IS=1.7A,VGS=0V
VSD
IS=-1.6A,VGS=0V
N-CH
0.74 1.0
P-CH 0.6 -0.8 -1.2 V
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