SI5513CD Datasheet, PDF (1/6 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary Enhancement MOSFET

SMD Type
Complementary Enhancement MOSFET
SI5513CD (KI5513CD)
■ Features
● N-Channel：VDS=20V ID=4A(VGS=4.5V)
RDS(ON) ＜ 35mΩ (VGS = 4.5V)
RDS(ON) ＜ 50mΩ (VGS = 2.5V)
RDS(ON) ＜ 90mΩ (VGS = 1.8V)
● P-Channel：VDS=-20V ID=-2.5A(VGS=-4.5V)
RDS(ON) ＜ 85mΩ (VGS =-4.5V)
RDS(ON) ＜ 115mΩ (VGS =-2.5V)
RDS(ON) ＜ 150mΩ (VGS =-1.8V)
MOSFET
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta=25℃
Ta=70℃
Pulsed Drain Current
Power Dissipation for Dual Operation
Power Dissipation for single Operation Ta=70℃
Junction Temperature
Storage Temperature Range
Symbol N-Channel P-Channel Unit
VDS
20
-20
V
VGS
±12
±12
4
-2.5
ID
3.2
-2
A
IDM
20
-20
PD
1.5
1.5
W
0.95
0.95
TJ
150
℃
Tstg
-55 to 150
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