PBSS5240V_15 Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
PBSS5240V (KBSS5240V)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- Emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Equivalent on-resistance
Base - emitter saturation voltage
Base - emitter turn-on voltage
DC current gain
Collector capacitance
Transition frequency
Note.1:Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO
VCB= -30 V , IE=0
VCB= -30 V , IE=0; Tj=150℃
ICEO VCE= -30 V , IB=0
IEBO VEB= -5V , IC=0
IC=-100 mA, IB=-1mA
IC=-500mA, IB=-50mA
VCE(sat)
IC=-1A, IB=-100mA (Note.1)
IC=-2A, IB=-200mA
RCE(sat) IC=-1A, IB=-100mA (Note.1)
VBE(sat) IC= -1A, IB=- 100mA
VBE(on) VCE= -5V, IC= -1A
hFE(1) VCE= -5V, IC= -1mA
hFE(2) VCE=- 5V, IC= -100mA
hFE(3) VCE=- 5V, IC= -500mA
hFE(4) VCE=- 5V, IC= -1A
hFE(5) VCE=- 5V, IC= -2A (Note.1)
CC VCB= -10V, IE=Ie=0 ,f=1MHz
fT
VCE= -10V, IC= -50mA,f=100MHz
Min Typ Max Unit
-40
-40
V
-5
-100 nA
-50 uA
-100 nA
-100 nA
-80 -120
-100 -145
mV
-180 -250
-370 -530
180 ＜250 mΩ
-1.1
V
-1
300
300
800
250
160
50
12 pF
150
MHz
■ Marking
Marking
52
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