PBSS5240V_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
PBSS5240V (KBSS5240V)
Transistors
■ Features
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency leading to reduced heat generation
● Reduced printed-circuit board area requirements.
1, 2, 5, 6
3
SOT523-6(SOT666)
4
5
6
Top view
3
2 _1.collector
2.collector
1 _3.base
4.emitter
5.collector
6.collector
4
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
Collector - Emitter Voltage
VCEO
-40
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous (Note.1)
IC
-1.8
Peak Collector Current
ICM
-3
A
Peak Repetitive Collector Current (Note.2)
ICRP
-2
Base Current (DC)
IB
-300
mA
Peak Base Current
IBM
-1
A
Collector Power Dissipation Ta ≤ 25℃ (Note.3)
300
Ta ≤ 25℃ (Note.4)
PC
Ta ≤ 25℃ (Note.1)
500
mW
900
Ta ≤ 25℃ (Note.2 and 3)
1.2
W
thermal resistance from junction to ambient (Note.3)
410
(Note.4)
(Note.1)
215
Rth j-a
140
K/W
(Note.1 and 3)
110
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-65 to 150
Note.1: Device mounted on a ceramic circuit board, Al2O3, standard footprint.
Note.2: Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Note.3: Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
Note.4: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
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