MMBT5088 Datasheet, PDF (2/2 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

SMD Type
TransistIoCrs
MMBT5088,MMBT5089
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector-emitter breakdown
voltage
MMBT5088
V(BR)CEO IC = 1.0 mA, IB = 0
MMBT5089
30
V
25
MMBT5088
Collector-base breakdown voltage
V(BR)CBO IC = 100 ìA, IE = 0
MMBT5089
35
V
30
Collector-cutoff current
MMBT5088
MMBT5089
ICBO
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
50 nA
50 nA
Emitter-base cut-off current
IEBO
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
50 nA
100 nA
DC current gain
MMBT5088
MMBT5089
hFE IC = 100 ìA, VCE = 5.0 V
300
900
400
1200
Collector-emitter saturation voltage
VCE(sat) IC =10 mA, IB = 1.0 mA
0.5 V
Base-emitter saturation voltage
VBE(on) IC =10 mA, VCE = 5.0 V
0.8 V
Current gain - bandwidth product
fT
IC = 500 ìA, VCE = 5.0mA,f = 20 MHz 50
MHz
Collector-base capacitance
Ccb VCB = 5.0 V,IE = 0, f = 100 KHz
4.0 pF
Emitter-base capacitance
Ceb VBE = 0.5 V,IC = 0, f = 100 KHz
10 pF
Small-signal current gain
MMBT5088
MMBT5089
350
hfe IC = 1.0 mA, VCE = 5.0 V, f = 1.0 KHz
450
1400
1800
Noise figure
MMBT5088
MMBT5089
NF
IC = 100 ìA, VCE = 5.0 V, Rs = 10KÙ,
f = 10 Hz to 15.7kHz
3.0 dB
2.0 dB
hFE Classification
TYPE
Marking
MMBT5088
1Q
MMBT5089
1R
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