MMBT5088 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

SMD Type
TransistIoCrs
NPN General Purpose Amplifier
MMBT5088,MMBT5089
Features
NPN general purpose amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Total device dissipation
Derate above 25
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
VCE0
VCBO
VEBO
IC
Tj
Tstg
PD
RèJC
RèJA
MMBT5088 MMBT5089
30
25
35
30
4.5
100
150
-55 to +150
625
350
5.0
2.8
83.3
200
357
Unit
V
V
V
mA
mW
mW/
/W
/W
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