KX1N60DS Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Power MOSFET

SMD Type
MOSFET
N-Channel Power MOSFET
KX1N60DS
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Off-State Drain-Source Current
Gate-Body Leakage Current
Symbol
VDSX
VGSS
IDSS
ID(off)
IGSS
Test Conditions
ID=250μA, VGS=-5V
IGS= ± 1mA (Open Drain)
VDS=25V, VGS=0V
VDS=600V, VGS=-5V
VDS=0V, VGS=±20V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Maximum Pullsed Drain-Source Current
Diode Forward Voltage
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
ISM
VSD
VDS=3V , ID=8μA
VGS= 0 V, ID=3mA
VGS= 10V, ID=16mA
VDS=50V, ID=10mA
VGS=-5V, VDS=25V, f=1MHz
VGS=-5V to 5V, VDD=400V, ID=10mA
ID=10mA, VDS=300V, , RGEN=6Ω,
VGS= -5…7V
IF= 10mA, dI/dt= 100A/μs, VR=300V ,
Tj = 25℃
Ta = 25℃
IS=16mA,VGS=-5V
Min Typ Max Unit
600
V
20
12
mA
0.1
uA
±10
-2.7 -1.8 -1
V
350 700
Ω
400 800
0.008 0.017
S
50
4.53
pF
1.08
1.14
0.5
nC
0.37
9.9
55.8
56.4
ns
136
243
636
nC
25
mA
100
1.2 V
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