KX1N60DS Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Power MOSFET

SMD Type
N-Channel Power MOSFET
KX1N60DS
■ Features
● ESD improved capability
● Depletion mode
● dv/dt rated
● Pb-free lead plating;ROHS compliant
● Halogen Free
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
MOSFET
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current (Note.1)
Tc = 70℃
30
ID
24
IDM
120
Power Dissipation
PD
0.5
Gate Source ESD(HBM-C=100pF,R=1.5KΩ)
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient
Maximum Temperature for soldering
Junction Temperature
Storage Temperature Range
VESD(G-S)
dv/dt
RthJA
TL
TJ
Tstg
300
5
250
300
150
-55 to 150
Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature
Note.2: IF=0.01A,di/dt ≤ 100A/us,VDD ≤ BVDS,Start TJ=25 ℃
Unit
V
mA
W
V
V/ns
℃/W
℃
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