KX120N06 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
N-Channel MOSFET
KX120N06
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=60V, VGS=0V
IGSS VDS=0V, VGS=±20V
VGS(th) VDS=VGS , ID=250μA
RDS(On) VGS=10V, ID=40A
gFS
VDS=5V, ID=40A
Ciss
Coss VGS=0V, VDS=30V, f=1MHz
Crss
Qg
Qgs
VGS=10V, VDS=30V, ID=30A
Qgd
td(on)
tr
td(off)
VGS=10V, VDS=30V, ID=1A,RG=2.5Ω
tf
trr
IF= 40A, dI/dt= 100A/μs,TJ = 25°C
Qrr ^(Note.1)
IS
VSD IS=20A,VGS=0V
Note.1: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Min Typ Max Unit
60 65
V
1 μA
±100 nA
2
3
4
V
5.7 6.5 mΩ
60
S
4800
440
pF
260
85
18
nC
28
16.8
10.8
55
ns
13.6
38
53
nC
90 A
1.2 V
2 _{www.kexin.com.cn}