KX120N06 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
N-Channel MOSFET
KX120N06
MOSFET
■ Features
● VDS (V) = 60V
● ID = 100 A (VGS = 10V)
● RDS(ON) ＜ 6.5mΩ (VGS = 10V)
● Special process technology for high ESD capability
● Fully characterized Avalanche voltage and current
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Derating factor
Single pulse avalanche energy
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=100℃
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10
–0.05
2.40 ± 0.20
1 GATE
2 DRAIN
3 SOURCE
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJC
TJ
Tstg
Rating
60
±20
100
70
320
150
1.07
550
0.94
175
-55 to 175
Unit
V
A
W
W/℃
mJ
℃/W
℃
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