KQD1P50 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 500V P-Channel MOSFET

SMD Type
TransistIoCrs
KQD1P50
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Testconditons
VGS = 0 V, ID = -250 A
Min Typ Max Unit
-400
V
Breakdown Voltage Temperature Coefficient
ID = -250 A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
IDSS
IGSSF
VDS = -500 V, VGS = 0 V
VDS = -400 V, TC=125
VGS = -30 V, VDS = 0 V
-1
A
-10
A
-100 nA
Gate-Body Leakage Current,Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forwrad Current
Maximum Pulsed Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
IGSSR VGS =30 V, VDS = 0 V
100 nA
VGS(th) VDS = VGS, ID = -250 A
-3.0
-5.0 V
RDS(on) VGS = -10 V, ID = -0.6A
8.0 10.5
gFS
VDS = -50 V, ID =-0.6A *
1.12
S
Ciss
270 230 pF
Coss VDS = -25 V, VGS = 0 V,f = 1.0 MHz
40 50 pF
Crss
6.0 8.0 pF
td(on)
9.0 30 ns
tr
td(off)
VDD = -250 V, ID = -1.5A,RG=25 *
25 60 ns
27 65 ns
tf
30 70 ns
Qg
11 14 nC
Qgs
VDS = -400 V, ID = -1.5A,VGS = -10 V *
2.0
nC
Qgd
5.6
nC
IS
-1.2 A
ISM
VSD
VGS = 0 V, IS =-1.2 A
trr
VGS = 0 V,dIF/dt = 100 A/ s,IS=-1.5A*
Qrr
-4.8 A
-5.0 V
200
ns
0.7
C
* Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
2 _{www.kexin.com.cn}