KQD1P50 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 500V P-Channel MOSFET

SMD Type
500V P-Channel MOSFET
KQD1P50
TransistIoCrs
Features
-1.2A, -500V, RDS(on) = 10.5 @VGS = -10 V
Low gate charge ( typical 11 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Drain Current Continuous (TC=25 )
Drain Current Continuous (TC=100 )
Drain Current Pulsed *1
Gate-Source Voltage
Single Pulsed Avalanche Energy*2
Avalanche Current *1
Repetitive Avalanche Energy *1
Peak Diode Recovery dv/dt *3
Power dissipation @ TA=25
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient *4
Thermal Resistance Junction to Ambient
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
PD
TJ, TSTG
TL
R JC
R JA
R JA
Rating
-500
-1.2
-0.76
-4.8
30
110
-1.2
3.8
-4.5
2.5
38
0.3
-55 to150
300
3.29
50
110
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=138mH,IAS=-1.2A,VDD=-50V,RG=25 ,Startion TJ=25
*3 ISD -1.5A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25
*4 When mounted on the minimum pad size recommended (PCB Mount)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
/W
/W
/W
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