KDS4953 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual 30V P-Channel PowerTrench MOSFET

SMD Type
ICIC
KDS4953
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage(Not 2)
Gate Threshold Voltage Temperature
Coefficient(Not 2)
Static Drain-Source On-Resistance(Not 2)
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain–Source Diode
Forward Current
Drain–Source Diode Forward Voltage
Symbol
BVDSS
Testconditons
VGS = 0 V, ID = -250 A
ID = -250 A, Referenced to 25
IDSS
IGSSF
IGSSR
VGS(th)
VDS = -24 V, VGS = 0 V
VGS = -20V, VDS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = -250 A
Min Typ Max Unit
-30
V
-23
mV/
-1
A
100 nA
-100 nA
-1 -1.7 -3 V
ID = -250 A, Referenced to 25
4.5
mV/
VGS = -10 V, ID =-5 A
46 55
RDS(on) VGS = -4.5 V, ID = -3.3 A
70 95 m
VGS = -10 V, ID =-5 A,TJ = 125
63 85
ID(on) VGS = -10 V, VDS = -5 V
-20
A
gFS
VDS = -5 V, ID = -5A
10
S
Ciss
528
pF
Coss VDS = -15 V, VGS = 0 V,f = 1.0 MHz
132
pF
Crss
70
pF
td(on)
7 14 ns
tr
td(off)
VDD = -15 V, ID = -1 A,VGS = -10 V, RGEN
= 6 (Note 2)
13 24 ns
14 25 ns
tf
9 17 ns
Qg
6
9 nC
Qgs
VDS = -15 V, ID =-5 A,VGS=-5V(Note 2)
2.2
nC
Qgd
2
nC
IS
-1.3 A
VSD
VGS=0V,IS=-1.3A (Note 2)
-0.8 -1.2 V
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