KDS4953 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual 30V P-Channel PowerTrench MOSFET

SMD Type
ICIC
Dual 30V P-Channel PowerTrench MOSFET
KDS4953
Features
-5 A, -30 V. RDS(ON) = 55m @ VGS = -10V
RDS(ON) = 95m @ VGS =-4.5V
Low gate charge(6nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Fast switching speed
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JC
Rating
-30
20
-5
-20
2
1.6
1
-55 to 175
78
40
Unit
V
V
A
A
W
/W
/W
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