KDS3512 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 80V N-Channel PowerTrench MOSFET

SMD Type
ICIC
KDS3512
Electrical Characteristics Ta = 25
Parameter
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Symbol
WDSS
IAR
BVDSS
Testconditons
VDD = 40 V, ID = 4.0A (Not 2)
( Not 2)
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 64 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 A
Min Typ Max Unit
90 mJ
4.0 A
80
V
80
mV/
1
A
100 nA
-100 nA
2 2.4 4
V
ID = 250 A, Referenced to 25
-6
mV/
VGS = 10 V, ID = 4.0 A
50 70
RDS(on) VGS = 6 V, ID = 3.7 A
55 80 m
VGS = 10 V, ID =4.0 A,TJ = 125
91 135
ID(on) VGS = 10 V, VDS = 5 V
20
A
gFS
VDS = 10V, ID = 4.0 A
14
S
Ciss
634
pF
Coss VDS = 40 V, VGS = 0 V,f = 1.0 MHz
58
pF
Crss
28
pF
td(on)
7 14 ns
tr
td(off)
VDD = 40 V, ID = 1 A,VGS = 10 V, RGEN
= 6 (Note 2)
3
6
ns
24 38 ns
tf
4
8
ns
Qg
VDS = 40 V, ID = 4.0 A,VGS = 10 V
Qgs
(Note 2)
Qgd
13 18 nC
2.4
nC
2.8
nC
IS
2.1 A
VSD
VGS = 0 V, IS = 2.1 A (Not 2)
0.8 1.2 V
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