KDS3512 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 80V N-Channel PowerTrench MOSFET

SMD Type
80V N-Channel PowerTrench MOSFET
KDS3512
Features
4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V
RDS(ON) = 80m @ VGS = 6 V
Low gate charge (13 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power dissipation
(Note 1a)
Power dissipation
(Note 1b)
Power dissipation
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JC
Rating
80
20
4
30
2.5
1.2
1
-55 to 175
50
25
Unit
V
V
A
A
W
/W
/W
www.kexin.com.cn ¹