KDD6030L Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 30V N-Channel Power Trench MOSFET

SMD Type
TransistIoCrs
KDD6030L
Electrical Characteristics Ta = 25
Parameter
Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Testconditons
Min Typ Max Unit
EAS Single Pulse, VDD = 15 V, ID= 12A (Note 2)
100 mJ
IAR ( Not 2)
12 A
BVDSS VGS = 0 V, ID = 250 A
30
V
ID = 250 A, Referenced to 25
24
mV/
IDSS
IGSS
VGS(th)
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
1
A
100 nA
1 1.9 3
V
ID = 250 A, Referenced to 25
-5
mV/
VGS = 10 V, ID = 12A
7.7 14.5
RDS(on) VGS = 4.5 V, ID = 10A
9.9 21 m
VGS = 10 V, ID =12 A,TJ = 125
11.4 25
ID(on) VGS = 10 V, VDS = 5 V
50
A
gFS VDS = 10 V, ID = 12 A
47
S
Ciss
1230
pF
Coss VDS = 15 V, VGS = 0 V,f = 1.0 MHz
325
pF
Crss
150
pF
RG VGS = 15 mV, f = 1.0 MHz
1.5
pF
td(on)
10 19 ns
tr
td(off)
VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6
(Note 2)
7 13 ns
29 46 ns
tf
12 21 ns
Qg
13 28 nC
Qgs VDS = 15 V, ID = 12 A,VGS = 5 V (Note 2)
3.5
nC
Qgd
5.1
nC
IS
2.7 A
VSD VGS = 0 V, IS = 2.9 A (Not 2)
trr
IF = 12 A, diF/dt = 100 A/ s
Qrr
0.76 1.2 V
24
nS
13
nC
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