KDD6030L Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 30V N-Channel Power Trench MOSFET

SMD Type
TransistIoCrs
30V N-Channel Power Trench MOSFET
KDD6030L
Features
12 A, 30 V. RDS(ON) = 14.5m @ VGS = 10 V
RDS(ON) = 21m @ VGS = 4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous @TC=25 (Note 3)
@Ta=25 (Note 1a)
Drain Current Pulsed
(Note 1a)
Power dissipation @ TC=25 (Note 3)
Power dissipation @ Ta=25 (Note 1a)
Power dissipation @ Ta=25 (Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JC
R JA
R JA
Rating
30
20
50
12
100
56
3.2
1.5
-55 to 175
2.7
45
96
Unit
V
V
A
A
A
W
/W
/W
/W
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