IRF840S Datasheet, PDF (2/5 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

SMD Type
MOSFET
N-Channel MOSFET
IRF840S (KRF840S)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
Test Conditions
ID=250μA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, VGS=0V,TJ=125℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=4.8A (Note.1)
VDS=50V, ID=4.8A (Note.1)
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=400V, ID=8A
Min Typ Max Unit
500
V
25
uA
250
±100 nA
2
4
V
0.85 Ω
4.9
S
1300
310
pF
120
63
9.3 nC
32
Internal Drain Inductance
LD
Internal Source Inductance
LS
4.5
nH
7.5
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
td(on)
tr
td(off)
tf
trr
Qrr
VDD = 250 V, ID = 8 A,
Rg = 9.1Ω, RD = 31Ω (Note.1)
TJ = 25°C, IF = 8A, dI/dt = 100A/μs
14
23
49
ns
20
970
8.9 uC
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
8
A
32
Diode Forward Voltage
VSD
IS=8A,VGS=0V,TJ = 25°C
Note.1: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2
V
2 _{www.kexin.com.cn}