IRF840S Datasheet, PDF (1/5 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

SMD Type
N-Channel MOSFET
IRF840S (KRF840S)
MOSFET
■ Features
● VDS (V) =500V
● ID =8 A (VGS = 10V)
● RDS(ON) ＜0.85Ω (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance Junction to Mounting Base
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 100℃
Tc = 25℃
Ta = 25℃
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJB
TJ
Tstg
Note.1: L = 14mH, IAS = 8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C.
Note.2: ISD ≤ 8 A, di/dt ≤ 100A/μs, VDD ≤ V(BR)DSS, Starting TJ ≤ 25°C.
Rating
500
±20
8
5.1
32
8
125
3.1
510
13
3.5
60
0.85
150
-55 to 150
Unit
V
A
W
mJ
V/ns
℃/W
℃
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