FZT851 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
Static Forward Current Transfer Ratio*
Transitional frequency
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT851
FZT851
Symbol
Testconditons
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
ICBO
VCB=120V
VCB=120V,Ta = 100
IEBO VEB=6V
IC=0.1A, IB=5mA
VCE(sat) ^{IC=1A, IB=50mA}
IC=2A, IB=50mA
IC=6A, IB=300mA
VBE(sat) IC=6A, IB=300mA
VBE(on) IC=6A, VCE=1V
IC=10mA, VCE=1V
IC=2A, VCE=1V*
hFE
IC=5A, VCE=1V*
IC=10A, VCE=1V*
fT IC=100mA, VCE=10V f=50MHz
Cobo VCB=10V, f=1MHz
t(on) IC=1A, VCC=10V
t(off) IB1=IB2=100mA
Transistors
Min Typ Max Unit
150
V
60
V
6
V
50 nA
1 ìA
10 nA
50
100
170
mV
375
1200 mV
1150 mV
100 200
100 200 300
75 120
25 50
130
MHz
45
pF
45
ns
1100
ns
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