FZT851 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

SMD Type
Transistors
NPN Silicon Planar High Current
(High Performance)Transistor
FZT851
Features
Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.
6 Amps continuous current, up to 20 Amps peak current.
Very low saturation voltages.
Excellent hFE characteristics specified up to 10 Amps.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Symbol
Rating
Unit
VCBO
150
V
VCEO
60
V
VEBO
6
V
IC
6
A
Continuous collector current
Power dissipation
Operating and storage temperature range
ICM
20
A
Ptot
3
W
Tj,Tstg
-55 to +150
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