BCP51 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP medium power transistors

SMD Type
BCP51,BCP52,BCP53
Transistors
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector cutoff current
ICBO
VCB = -30 V, IE = 0
VCB = -30 V, IE = 0; Tj = 125
-100 nA
-10 ìA
Emitter cutoff current
IEBO VEB = -5 V, IC = 0
-100 nA
IC = -5 mA; VCE = -2 V
63
DC current gain
hFE IC = -150 mA; VCE = -2 V
63
250
IC = -500 mA; VCE = -2 V
40
DC current gain BCP51-10,BCP52-10,BCP53-10
BCP51-16,BCP52-16,BCP53-16
IC = -150 mA; VCE = -2 V
hFE
IC = -150 mA; VCE = -2 V
63
160
100
250
Collector-emitter saturation voltage
VCE(sat) IC = -500 mA; IB = -50 mA
-0.5 V
Base to emitter voltage
VBE IC = -500 mA; VCE = -2 V
-1
V
Transition frequency
fT IC = -10 mA; VCE = -5 V; f = 100 MHz
115
MHz
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