BCP51 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistors

SMD Type
Transistors
PNP Medium Power Transistors
BCP51,BCP52,BCP53
Features
High collector current
1.3 W power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (open emitter) BCP51
BCP52
BCP53
Collector-emitter voltage(open base) BCP51
BCP52
BCP53
Emitter-base voltage( open collector)
Collector current
Peak collector current
Peak base current
Total power dissipation Tamb 25
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Ramb
Rth(j-a)
Rth(j-s)
Rating
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
-0.2
1.3
-65 to +150
150
-65 to +150
95
14
Unit
V
V
V
V
V
V
V
A
A
A
W
K/W
K/W
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