BC869 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP medium power transistor

SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
BC868
BC868-16
BC869-25
Collector-emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
BC869
Symbol
Testconditons
ICBO
VCB = -25 V, IE = 0
VCB = -25 V, IE = 0; Tj = 25
IEBO VEB = -5 V, IC = 0
IC = -5 mA; VCE = -10 V
hFE IC = -500 mA; VCE = -1 V
IC = -1 A; VCE = -1 V
hFE IC = -500 mA; VCE = -1 V
hFE IC = -500 mA; VCE = -1 V
VCE(sat) IC = -1 A; IB = -100 mA
IC = -5 mA; VCE = -10 V
VBE
IC = -1 A; VCE = -1 V
CC IE = Ie = 0; VCB = -10 V; f = 1 MHz
fT
IC = -50 mA; VCE = -5 V; f = 100 MHz
Min Typ Max Unit
-100 nA
-10 ìA
-100 nA
50
85
375
60
100
250
160
375
-500 mV
-700 mV
-1
V
28
pF
40 140
MHz
hFE Classification
TYPE
Marking
BC869
CEC
BC869-16
CGC
BC869-25
CHC
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