BC869 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistor

SMD Type
Transistors
PNP Medium Power Transistor
BC869
Features
High current.
Three current gain selections.
1.2 W total power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-32
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-2
A
Peak base current
IBM
-200
mA
Total power dissipation
*1 and *2
0.5
W
*1 and *3
Ptot
0.85
W
*1 and *4
1.2
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *1 and *2
250
K/W
*1 and *3
Rth(j-a)
147
K/W
*1 and *4
104
K/W
Thermal resistance from junction to solder point
Rth(j-s)
20
K/W
*1.Refer to SOT89 standard mounting conditions.
*2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
*3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
*4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
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