BAS521 Datasheet, PDF (2/3 Pages) NXP Semiconductors – High voltage switching diode

SMD Type
Diodes
■ Typical Characterisitics
500
I_F
(mA)
400
Switching Diodes
BAS521 (KAS521)
10²
I_R
(µA)
10
300
1
200
(1) (2) (3)
100
10^−1
0
0
0.5
1 _{VF (V)} 1.5
(1) T_amb = 150 °C
(2) T_amb = 75 °C
(3) T_amb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
10^−2
0
40
80
120
160
200
T_j (°C)
V_R = V_Rmax
Fig 2. Reverse current as a function of junction
temperature; typical values
300
I_F
(mA)
200
0.42
C_d
(pF)
0.38
100
0.34
0
0
50
100
150
200
T_amb (°C)
Fig 3. Forward current as a function of ambient
temperature; derating curve
0.3
0
10
20
30
40
V_R (V)
Fig 4.
f = 1 MHz; T_amb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
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