BAS521 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High voltage switching diode

SMD Type
Diodes
Switching Diodes
BAS521 (KAS521)
■ Features
● High switching speed: trr ≤ 50 ns
● High reverse voltage: VR ≤ 300 V
● Repetitive peak forward current: IFRM ≤ 1 A
● High-speed switching
● High-voltage switching
1
cathode
2
anode
SOD-523
1.2 +0.1
-0.1
+
-
0.6 +0.1
-0.1
1.6 +0.1
-0.1
0.77max
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current @ Tsp ≤ 90 °C
Repetitive Peak Forward Current
Non-repetitive peak forward surge current (t=1us)
Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Solder Point
Junction Temperature
Storage Temperature range
Symbol
VRM
VR
IF
IFRM
IFSM
Pd
RθJA
RθJSP
TJ
Tstg
Rating
300
300
250
1
4.5
500
500
120
150
-65 to 150
Unit
V
mA
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
(Note.1)
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF IF= 100 mA
VR= 250 V
IR
VR= 250 V , Ta = 150℃
Cj VR= 0 V, f= 1 MHz
trr
(Note.2)
Min Typ Max Unit
300
V
1.1
150 nA
100 uA
5
pF
50 ns
Note.1: Pulse test: tp = 300 μs; δ = 0.02.
Note.2: When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
■ Marking
Marking
L4
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