AO3423-3 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
MOSFET
P-Channel Enhancement MOSFET
AO3423 (KO3423)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(on)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±12V
VDS=VGS ID=-250μA
VGS=-10V, ID=-2A
VGS=-10V, ID=-2A TJ=125℃
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-2A
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-2A
VGS=-10V, VDS=-10V, RL=5Ω,RGEN=3Ω
IF=-2A, dI/dt=100A/μs
IS=-1.0A,VGS=0V
Min Typ Max Unit
-20
V
-1
μA
-5
±10 u A
-0.5 -0.85 -1.2 V
76 92
99 119
mΩ
94 118
128 166
-17
A
6.8
S
250 325 400
40 63 85 pF
22 37 52
11.2 17 Ω
3.2 4.5
0.6
nC
0.9
11
5.5
22
ns
8
6.1
1.4
nC
-1.5 A
-0.76 -1
V
■ Marking
Marking
AS*
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