AO3423-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
AO3423 (KO3423)
MOSFET
■ Features
● VDS (V) =-20V
● ID =-2.0 A (VGS =-10V)
● RDS(ON) ＜ 92mΩ (VGS =-10V)
D
● RDS(ON) ＜ 118mΩ (VGS =-4.5V)
● RDS(ON) ＜ 166mΩ (VGS =-2.5V)
G
S
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current (Note.1)
Power Dissipation (Note.2)
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤10 s
Steady State
Thermal Resistance.Junction- to-Lead
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
Rating
-20
±12
-2
-2
-17
1.4
0.9
90
125
60
150
-55 to 150
Unit
V
A
W
℃/W
℃
Note.1:Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on
low frequency and duty cycles to keep initialTJ=25°C.
Note.2: The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
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