2SJ387S Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon P-Channel MOSFET

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MOSFIECT
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate Drain Charge
Body to drain diode forward voltage
Body to drain diode reverse recovery time
2SJ387S
Symbol
Testconditons
VDSS ID=-10mA,VGS=0
VGSS IG= 200 A ,VDS=0
IDSS VDS=-16V,VGS=0
IGSS VGS= 6.5V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
Yfs VDS=-10V,ID=-5A
VGS=-4V,ID=-5A
RDS(on)
VGS=-2.5V,ID=-5A
Ciss
Coss VDS=-10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-4V,ID=--5A RL=2
tf
Qg
Qgs VGS=-10V,ID=-1A,VDD=-48V
Qgd
VDF IF=-10A,VGS=0
trr IF=-10A,VGS=0,diF/dt=20A/ s
Min Typ Max Unit
-20
V
10
V
-100 A
10 A
-0.5
-1.5 V
7 12
S
0.05 0.07
0.07 0.1
1170
pF
860
pF
310
pF
20
ns
325
ns
350
ns
425
ns
6.5
nC
4.5
nC
2.0
nC
-1.0
V
240
ns
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