2SJ387S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon P-Channel MOSFET

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MOSFIECT
Silicon P-Channel MOSFET
2SJ387S
Features
Low on-resistance
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC - DC converter
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-20
V
VGSS
10
V
ID
-10
A
ID
-40
A
PD
20
W
Tch
150
Tstg
-55 to +150
* PW 10 s; d 1%.
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