2SD1781_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
■ Typical Characterisitics
2SD1781 (2SD1781K)
1000
500
200
100
50
Ta=25°C
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
400
Tc=25°C
1mA
900µ A
300
800µ A
700µ A
600µ A
200
500µ A
400µ A
300µ A
100
200µ A
100µ A
0
IB= 0µ A
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
1000
500
200
100
50
Ta=100°C
25°C
−55°C
VCE=5V
20
10
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector
current
1000
500
Ta=25°C
1000
500
lC/lB=10
200
100
50
IC/IB=50
20
20
10
10
5
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
200
100
Ta=100°C
25°C
50
−55°C
20
10
5
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current ( )
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
1000
500
Ta=25°C
VCE=5V
200
100
50
20
10
−1 −2 −5 −10 −20 −50 −100 −200
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product vs.
emitter current
100
Ta=25°C
f=1MHz
IE=0A
50
20
10
5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta=25°C
200
f=1MHz
IC=0A
100
50
20
10
5
0.1 0.2 0.5 1.0 2.0 5.0 10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance vs.
emitter-base voltage
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