2SD1781_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1781 (2SD1781K)
Transistors
■ Features
● Very Low VCE(sat).
● High current capacity in compact package.
● Complimentary to 2SB1197(2SB1197K)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
40
VCEO
32
V
VEBO
5
IC
800
mA
ICP
1.5
A
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
Note.1:Single pulse Pw=100ms
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 30 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB=50mA
Base - emitter saturation voltage
VBE(sat) IC=500 mA, IB=50mA
DC current gain
hFE VCE= 3V, IC= 100mA
Collector output capacitance
Cob VCB= 10V, IE=0,f=1MHz
Transition frequency
fT VCE= 5V, IE= -50mA,f=100MHz
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
2SD1781-Q
Range
120-270
Marking
AFQ
2SD1781-R
180-390
AFR
1.Base
2.Emitter
3.collector
Min Typ Max Unit
40
32
V
5
0.1
uA
0.1
0.1 0.4
V
1.2
120
390
15
pF
150
MHz
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