2SD1767_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
■ Typical Characterisitics
NPN Transistors
2SD1767
1.0 ^Ta=25°C _10mA
9mA
0.8 ^8mA
0.6
0.4
0.2
76mm5AAmA
4mA
3mA
2mA
1mA
0
IB=0A
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
50
Ta=25°C
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
1000
500
Ta=25°C
200
100
VCE=5V
3V
1V
50
1 2 5 10 20 50 100 200 500 5000
COLLECTOR CURRENT : IC (mA)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagetion characteristics Fig.3 DC current gain vs. collector current
0.2
0.1
IC/IB
0.05
Ta=25°C
0.02
0.01
2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
VCE=5V
500
200
100
50
20
10
−1 −2
−5 −10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.5 Resistance raito vs. emitter current
Ta=25°C
f=1MHz
100
IC=0A
50
20
10
5
0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHz
100
IC=0A
50
20
10
5
0.5 1 2
5 10 20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
2
1 ^{IC Max Pulse}
IC Max
0.5
0.2
P_{W =10P0m}^W_s=_10ms
DC
0.1
Tc=25°C
0.05 Single
nonrepetitive
pulse
0.02
12
5 10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
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