2SD1767_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1767
Transistors
■ Features
● High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
● Complementary to 2SB1189
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
80
VCEO
80
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
Collector Current - Pulse
IC
0.7
A
ICP
1
Collector Power Dissipation
0.5
PC
W
2
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50 mA
VBE(sat) IC=500 mA, IB=50 mA
hFE VCE= 3V, IC= 100 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -50mA,f=100MHz
Min Typ Max Unit
80
80
V
5
0.5
uA
0.5
0.2 0.4
V
1.2
120
390
10
pF
120
MHz
■ Classification of hfe
Type
2SD1767-Q
Range
120-270
Marking
DC Q*
2SD1767-R
180-390
DC R*
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