2SB710A_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
■ Typical Characterisitics
PNP Transistors
2SB710A
P_C - T_a
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature T_a (°C)
V_CE(sat) - I_C
−10
I _C/I_B = 10
−1 200
−1 000
I_C V_CE
T a = 25°C
−800
−600
−400
−200
IB =−10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0
0 –2 –4 –6 –8 –10 –12
Collector-emitter voltage V_CE (V)
−100
V _BE(sat)
I_C
I_C /I_B = 10
−1
− 0.1
− 0.01
T _a=75°C
25°C
−25°C
−10
25°C
−1
T _a = −25°C
75°C
− 0.1
− 0.001
−1
240
200
−10
−100
−1 000
Collector current IC (mA)
f_T I_E
V _CB = −10 V
T a = 25°C
− 0.01
−1
24
20
−10
−100
−1 000
Collector current I C(mA)
C_ob V_CB
I_E = 0
f = 1 MHz
T a = 25°C
160
16
120
12
80
8
40
4
0
1
10
100
Emitter current I _E (mA)
0
−1
−10
−100
Collector-base voltage V_CB (V)
−800
−700
−600
−500
−400
−300
−200
−100
0
0
600
500
I_C I_B
V CE = −10 V
T a = 25°C
−2 −4 −6 −8 −10
Base current I_B (mA)
h_FE I_C
V CE = −10 V
400
300
T a = 75°C
200 25°C
−25°C
100
0
− 0.01
−120
−100
− 0.1
−1
−10
Collector current IC (A)
V_CER R_BE
IC = −2 mA
T a = 25°C
−80
−60
2SB0710A
−40
−20
0
1
10
100
1000
Base-emitter resistance RBE (kΩ)
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