2SB710A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB710A
Transistors
■ Features
● Large collector current IC
● Complimentary to 2SD602A.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
VEBO
-5
IC
-500
mA
ICP
-1
A
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= - 50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-300 mA, IB=-30mA
VBE(sat) IC=-300 mA, IB=-30mA
VCE= -10V, IC= -150mA
hFE
VCE= -10V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 50mA,f=200MHz
Min Typ Max Unit
-60
-50
V
-5
-0.1
uA
-0.1
-0.35 -0.6
V
-1.1 -1.5
85
340
40
6 15 pF
200
MHz
■ Classification of hfe(1)
Type
2SB710A- Q
Range
85-170
Marking
DQ
2SB710A- R
120-240
DR
2SB710A- S
170-340
DS
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