IRFR420 Datasheet, PDF (7/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420, SiHFR420, SiHFU420
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
R_G
• dV/dt controlled by R_G
+
• I_SD controlled by duty factor "D"
• D.U.T. - device under test
- ^VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V*
D.U.T. I_SD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode
Inductor current
forward drop
Ripple ≤ 5 %
I_SD
* V_GS = 5 V for logic level devices and 3 V drive devices
Fig. 14 -For N-Channel
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