IRFR420 Datasheet, PDF (1/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420, SiHFR420, SiHFU420
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
3.0
19
3.3
13
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR420/SiHFR420)
• Straight Lead (IRFU420/SiHFU420)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR420PbF
SiHFR420-E3
SnPb
IRFR420
SiHFR420
Note
a. See device orientation.
DPAK (TO-252)
IRFR420TRPbF^a
SiHFR420T-E3^a
IRFR420TR^a
SiHFR420T^a
DPAK (TO-252)
IRFR120TRLPbF^a
SiHFR120TL-E3^a
IRFR120TRL^a
SiHFR120TL^a
IPAK (TO-251)
IRFU420PbF
SiHFU420-E3
IRFU420
SiHFU420
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
LIMIT
500
± 20
2.4
1.5
8.0
0.33
0.020
400
2.4
4.2
42
2.5
3.5
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
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