IRF840S Datasheet, PDF (7/7 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

IRF840S
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
R_G
• dV/dt controlled by R_G
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor "D"
- ^VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V*
D.U.T. I_SD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
* V_GS = 5 V for logic level devices
Fig. 14 - For N-Channel
2014-8-30
7
www.kersemi.com