IRF840S Datasheet, PDF (1/7 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

IRF840S
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirement
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
D²PAK (TO-263)
GD
S
D
G
S
N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
63
0.85
9.3
32
Single
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF840SPbF
SiHF840S-E3
SnPb
IRF840S
SiHF840S
Note
a. See device orientation.
D²PAK (TO-263)
IRF840STRLPbF^a
SiHF840STL-E3^a
IRF840STR^aL
SiHF840STL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 14 mH, R_G = 25 Ω, I_AS = 8.0 A (see fig. 12).
c. I_SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D²PAK (TO-263)
IRF840STRRPbF^a
SiHF840STR-E3^a
IRF840STR^a
SiHF840STR^a
LIMIT
500
± 20
8.0
5.1
32
1.0
0.025
510
8.0
13
125
3.1
3.5
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
2014-8-30
1
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