IRF830S Datasheet, PDF (7/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

IRF830S, SiHF830S
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
R_g
• dV/dt controlled by R_g
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor “D”
- ^VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V^a
D.U.T. l_SD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
Note
a. V_GS = 5 V for logic level devices
2014-8-28
Fig. 14 - For N-Channel
7
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