IRF830S Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
+
- ^{V DD}
Fig. 12a - Unclamped Inductive Test Circuit
IRF830S, SiHF830S
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
600
I_D
Top 2.0 A
500
2.8 A
Bottom 4.5 A
400
300
200
100
0 ^{VDD = 50 V}
25
50
75
100
125
150
91064_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
2014-8-28
6
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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