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| IRFZ34NS Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFZ34NS/LPBF
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01â¦
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
250
ID
TOP
6.5A
11A
200
BOTTOM 16A
150
100
50
0 VDD = 25V
A
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50Kâ¦
12V
.2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
2014-8-26
6
www.kersemi.com
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