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| IRFZ34NS Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
IRFZ34NSPBF
IRFZ34NLPBF
D 2 Pak
TO-262
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
G
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10VÂ
Continuous Drain Current, VGS @ 10VÂ
Pulsed Drain Current ÂÂ
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt ÂÂ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB mount) **
D
VDSS = 55V
RDS(on) = 0.040â¦
ID = 29A
S
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
ÂÂÂÂ
ÂÂÂÂ
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2014-8-26
1
www.kersemi.com
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