IRFB3207 Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

5.0
ID = 1.0A
4.5
ID = 1.0mA
ID = 250µA
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
16
14
12
10
8
6
IF = 45A
VR = 64V
4
TJ = 125°C
TJ = 25°C
2
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
400
IRF/B/S/SL3207
16
14
12
10
8
6
IF = 30A
VR = 64V
4
TJ = 125°C
TJ = 25°C
2
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
400
300
200
100
IF = 30A
VR = 64V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
300
2014-8-13
200
100
IF = 45A
VR = 64V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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