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IRFB3207 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF/B/S/SL3207
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
Min.
75
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.69
3.6
âââ
âââ
âââ
âââ
âââ
1.2
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 1mAd
4.5 m⦠VGS = 10V, ID = 75A g
4.0 V VDS = VGS, ID = 250µA
20 µA VDS = 75V, VGS = 0V
250
VDS = 75V, VGS = 0V, TJ = 125°C
200 nA VGS = 20V
-200
âââ
VGS = -20V
⦠f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 âââ âââ
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
âââ 180 260
âââ 48 âââ
âââ 68 âââ
âââ 29 âââ
âââ 120 âââ
âââ 68 âââ
âââ 74 âââ
âââ 7600 âââ
Coss
Output Capacitance
âââ 710 âââ
Crss
Reverse Transfer Capacitance
âââ 390 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 920 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h âââ 1010 âââ
S VDS = 50V, ID = 75A
nC ID = 75A
VDS = 60V
VGS = 10V g
ns VDD = 48V
ID = 75A
RG = 2.6â¦
VGS = 10V g
pF VGS = 0V
VDS = 50V
Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V j, See Fig.11
VGS = 0V, VDS = 0V to 60V h, See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) di
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 180c A MOSFET symbol
D
showing the
âââ âââ 720
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
âââ 42 63 ns TJ = 25°C
VR = 64V,
âââ 49 74
TJ = 125°C
âââ 65 98 nC TJ = 25°C
IF = 75A
di/dt = 100A/µs g
âââ 92 140
TJ = 125°C
âââ 2.6 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.33mH
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25â¦, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 ISD ⤠75A, di/dt ⤠500A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
2014-8-13
2
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