IRF830APBF Datasheet, PDF (6/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF830A, SiHF830A
www.kersemi.com
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
6