IRF830APBF Datasheet, PDF (5/7 Pages) International Rectifier – HEXFET Power MOSFET

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Fig. 9 - Maximum Drain Current vs. Case Temperature
10
IRF830A, SiHF830A
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
1 _{D = 0.50}
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
P_DM
t₁
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
5